ON THE PROBLEM OF WATKINS SUBSTITUTION AND MIGRATION OF SILICON ATOMS IN SILICON

N I Berezhnov; A R Chelyadinskii; M Jadan; Y R Suprunbelevich

doi:10.1016/0168-583X(93)95751-P

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ON THE PROBLEM OF WATKINS SUBSTITUTION AND MIGRATION OF SILICON ATOMS IN SILICON

Journal article

Peer reviewed

ON THE PROBLEM OF WATKINS SUBSTITUTION AND MIGRATION OF SILICON ATOMS IN SILICON

N I Berezhnov, A R Chelyadinskii, M Jadan and Y R Suprunbelevich

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, Vol.73(3), pp.357-361

01/03/1993

DOI: https://doi.org/10.1016/0168-583X(93)95751-P

Abstract

Instruments & Instrumentation

Nuclear Science & Technology

Physical Sciences

Physics

Physics, Atomic, Molecular & Chemical

Physics, Nuclear

Science & Technology

Technology

Displacement of B, P, Sb and As atoms out of the crystal lattice sites of ion-implanted silicon by interstitial silicon atoms generated during annealing of interstitial complexes has been investigated. It has been revealed that the efficiency of the displacement is determined by the magnitude of the discrepancy between the covalent radii of the dopant atoms and silicon. A model of athermal movement of the interstitial Si atom in the field of elastic deformation of the crystal lattice caused by the dopant substitutional atoms has been proposed.

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Title: ON THE PROBLEM OF WATKINS SUBSTITUTION AND MIGRATION OF SILICON ATOMS IN SILICON
Creators - without role: N I Berezhnov - Belarusian State University
A R Chelyadinskii - Belarusian State University
M Jadan - Belarusian State University
Y R Suprunbelevich
Publication Details: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, Vol.73(3), pp.357-361
Publisher: Elsevier
Number of pages: 5
Identifiers: 9914848408331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article