Abstract
Effect of composition and annealing temperature on the optical properties of In(8)Ge(x)Se(92-x) (14 <= x <= 25.5) thin films deposited by electron beam from bulk samples prepared using melt quench technique are investigated and discussed. All films have amorphous structure. It was found that the electronic energy gap E(g) increases with increasing Ge contents and has an ubrupt change at coordination number Z >= 2.65. The ratio of free carrier concentration to the carrier effective mass (N/m*) and the high frequency dielectric constant epsilon(infinity) showed also uprupt change at Z >= 2.65. The optical relaxation time tau found to have a minimum value at Z >= 2.65. The optical energy gap E(g) found to be affected by annealing.