Abstract
Electrical conductivity was performed on amorphous thin films of Ge1–xSe2Pbx (with x = 0, 0.2, 0.4, 0.6 and 0.8) as a function of temperature in the range 300–450 K. The experimental results indicate that the conduction is through thermally activated process having two conduction mechanisms. In the first region at high-temperatures range, the values of $\sigma _{o}$ suggest that the dominant conduction of charge carriers changes from the extended states to the localized states in the band tails at composition x = 0.8. The experimental results have also been analyzed using Meyer-Neldel Rule. The other one appears in the low temperatures region and the conductivity has been analyzed using Mott's variable range hopping conduction. Mott's parameters were calculated for Ge1–xSe2Pbx films.