On oxygen deficiency and fast transient charge-trapping effects in high-k dielectrics

Huang-Chun Wen; H RUSTY HARRIS; Chadwin D Young; Hongfa Luan; Husam N Alshareef; Kisik Choi; Dim-Lee Kwong; Prashant Majhi; Gennadi Bersuker; BYOUNG HUN Lee

doi:10.1109/LED.2006.886711

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On oxygen deficiency and fast transient charge-trapping effects in high-k dielectrics

Journal article

Peer reviewed

On oxygen deficiency and fast transient charge-trapping effects in high-k dielectrics

Huang-Chun Wen, H RUSTY HARRIS, Chadwin D Young, Hongfa Luan, Husam N Alshareef, Kisik Choi, Dim-Lee Kwong, Prashant Majhi, Gennadi Bersuker and BYOUNG HUN Lee

IEEE electron device letters, Vol.27(12), pp.984-987

01/12/2006

DOI: https://doi.org/10.1109/LED.2006.886711

Abstract

Applied sciences

Electronics

Exact sciences and technology

Materials

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Title: On oxygen deficiency and fast transient charge-trapping effects in high-k dielectrics
Creators - without role: Huang-Chun Wen - The University of Texas at Austin
H RUSTY HARRIS - Sematech
Chadwin D Young - Sematech
Hongfa Luan - Sematech
Husam N Alshareef - Texas Instruments
Kisik Choi - Sematech
Dim-Lee Kwong - The University of Texas at Austin
Prashant Majhi - Intel
Gennadi Bersuker - Sematech
BYOUNG HUN Lee - Sematech
Publication Details: IEEE electron device letters, Vol.27(12), pp.984-987
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9945960708331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article