Abstract
Here, we report for the first time the creation of Cd1-xOsxTe (0 = x = 0.1) quantum dot using poly(9,9-dioctylfluorene-alt-benzothiadiazole) assisted polyol approach. The stimulus of osmium, Os, on the structure and optical emission behavior of CdTe quantum dots were examined. The Xray diffraction measurement revealed the preservation of the cubic structures of CdTe crystals at all Os atoms concentration, implies the successful partial replacement of the Os atoms in the Cd cites. The transmission electron microscopy inspected that the doping of CdTe with Os atoms caused an increase of its particle diameter from 1.9 +/- 0.2 nm to 7.1 +/- 0.3 nm. The inclusion of Os atoms in the Cd atom cites instigated a shift to the red spectrum for both of the optical absorption/emission spectra. Astonishing upgrading of the luminescent intensities and a reduction of the width of emission spectra was achieved. An enlargement of the luminescent quantum yield from 31 % to 92 % was perfectly accomplished. A decreasing of the Stokes shift owing to the inclusion of Os atoms in the Cd cites, thereby a successful constraining of the crystal defects was realized. These outstanding demeanors may concrete an avenue to utilizing the developed Cd1xOsxTe semiconductor quantum dots for the fabrication of competent laser diodes.