One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters

Journal article

Peer reviewed

D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, T. Kawashima, T. Nagai, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki

Physica status solidi. A, Applications and materials science, Vol.204(6), pp.2005-2009

06/2007

Abstract

68.37.Hk

68.37.Lp

68.55.Jk

68.55.Ln

78.55.Cr

85.60.Jb

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Title: One-step lateral growth for reduction in defect density of a -plane GaN on r -sapphire substrate and its application in light emitters
Creators - without role: D. Iida - E-mail: m0634003@ccmailg.meijo-u.ac.jp
A. Miura - Meijo University
Y. Okadome - Meijo University
Y. Tsuchiya - Meijo University
T. Kawashima - Meijo University
T. Nagai - Meijo University
M. Iwaya - Meijo University
S. Kamiyama - Meijo University
H. Amano - Meijo University
I. Akasaki - Meijo University
Publication Details: Physica status solidi. A, Applications and materials science, Vol.204(6), pp.2005-2009
Publisher: WILEY-VCH Verlag
Number of pages: 5
Identifiers: 9944936008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article