Abstract
In the current study, we investigated the partial decomposition of GaN layers grown on SiNtreated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy (APMOVPE) vertical reactor under N2 ambient at 1200 degrees C. Under these experimental conditions, we studied the decomposition of different coalescence degrees GaN layers and the early thermal decomposition stages of GaN films. By the help of the scanning electron microscope (SEM), the surface morphology of the decomposed GaN epilayers was examined. We demonstrated that the thermal decomposition leads to an irregular etching process, which was carried out step by step. The optical properties of the decomposed films were then studied by using the photoreflectance (PR) technique at room temperature and at 11 K. We determined a logarithmic relation between the built-in electric field in the surface of GaN layers and the stress value. A model is also proposed to extract the stress value from PR spectra. It should be noted also that by using the thermal decomposition process, the stress inside GaN layers can be reduced by a factor of 6.