Abstract
In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient ( alpha ) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current-voltage, I-V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300-375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V sub(oc,) of 0.42 V, short-circuit current density, J sub(sc,) of 3.25 mA/cm super(2), fill factor, FF, of 0.35 and power conversion efficiency, [eta], of 3.2% under 15 mW/cm super(2) white light illumination.