Abstract
The optical gain spectra of doped lattice-matched GaNAsBi-based single quantum well (SQW) was theoretically investigated using a (16 x 16) band anti-crossing (BAC) model combined with self-consistent calculation. For the sake of comparison, we computed the optical gain of both (i-n-i) and (i-p-i) doped well types in GaAs/GaNAsBi/GaAs quantum structure. The highest obtained material gain G(max) was 1.2 x 10(4)cm(-1) for (i-n-i) type doped with N-2D(d) = 2.5 x 10(12)cm(-2). We proposed investigating the p-i-n type structure to enhance the optical performance of GaAs/GaNAsBi/GaAs SQW. The Bi composition was optimized in order to obtain Te1-h1 = 1.55 mu m. The effect of well width on optical gain spectra was also discussed. (C) 2016 Elsevier Ltd. All rights reserved.