Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs

Journal article

Peer reviewed

A Rebev, L Beji, B EL JANI and P Gibart

Journal of crystal growth, Vol.191(4), pp.734-739

01/08/1998

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

Vapor phase epitaxy; growth from vapor phase

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Title: Optical monitoring of the growth rate reduction by CCl4 during metalorganic vapour-phase epitaxy deposition of carbon doped GaAs
Creators - without role: A Rebev - Laboratoire de Physique des Matériaux, 5000 Monastir, Tunisia
L Beji - Laboratoire de Physique des Matériaux, 5000 Monastir, Tunisie
B EL JANI - Laboratoire de Physique des Matériaux, 5000 Monastir, Tunisie
P Gibart - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Publication Details: Journal of crystal growth, Vol.191(4), pp.734-739
Publisher: Elsevier
Identifiers: 9929148308331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article