Abstract
GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.
•Core/shell nanowire in which GaAs/GaInAs MQWs shells having different GaInAs shell width were formed on GaAs core nanowire surface using MBE.•TEM measurements confirmed the formation of core/shell nanowire, PL measurement showed that emission energy and lifetime of carriers in the shell can be tuned by simply changing GaInAs shell width.•It is also analyzed that fast and slow carrier lifetime are responsible for indirect nature of WZ/ZB mixture in GaInAs shell which is coherent to that of GaAs core nanowire.