Abstract
Thin films of zinc oxide doped with Zn
1−
x
Li
x
O with
x=0.2 (ZnO
:
Li), have been prepared on sapphire, MgO and quartz substrates by DC magnetron sputtering method at 5
mTorr. The substrate temperatures were fixed to about 573
K. We have measured the transmission and reflection spectra and determined the absorption coefficient, optical band-gap (
E
gd
opt), the high frequency dielectric constant
ε′
∞ and the carrier concentration
N for the as-prepared films at room temperature. The films show direct allowed optical transitions with
E
gd
opt values of 3.38, 3.43 and 3.29
eV for films deposited on sapphire, MgO and quartz substrates, respectively. The dependence of the obtained results on the substrate type are discussed.