Abstract
Optical properties of In.08Ga.92As/GaAs structure grown by metal-organic vapor phase epitaxy have been investigated. Spectral reflectance (SR) and photoreflectance (PR) as well as near-infrared Photoluminescence (PL) were performed in this study. In fact, SR signals in the range 200-1700 nm provided specific parameters of materials such as optical constant spectra, sensitivity to wave-length-and critical point energies. In addition, band gap energy was determined by both PR and optical absorption measurements at room temperature. Spin-orbit splitting, internal electric field and electro-optical energy were also calculated. Results provided by previous techniques present a good correlation and complementarities and agree well with the literature. On the other hand, the origins of 12 K PL peaks at 1.42, 1.38 and 1.29 eV, have been identified by performing excitation power (P-ex) study. Finally, the peak at 1.38 eV has two regimes of variation with P-ex separated by a critical power around 50 mW. (C) 2013 Elsevier Ltd. All rights reserved.