Abstract
We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric \alpha -In 2 Se 3 . We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW material-based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using \alpha -In 2 Se 3 memory devices, we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW material-based optoelectronic memories for dense device integration and next-generation computation.