Abstract
The room temperature laser generation in the yellow - green (lambda = 558.5-566.7 nm) spectral range has been demonstrated under optical pumping by a pulsed nitrogen laser of Cd(Zn)Se/ZnSe quantum dot heterostructures. The maximum achieved laser wavelength was as high as lambda = 566.7 nm at a laser cavity length of 945 mu m. High values of both the output pulsed power (up to 50 W) and the external differential quantum efficiency (similar to 60%) were obtained at a cavity length of 435 mu m. Both a high quality of the laser heterostructure and a low lasing threshold (similar to 2 kW cm(-2)) make it possible to use a pulsed InGaN laser diode as a pump source. A laser microchip converter based on this heterostructure has demonstrated a maximum output pulse power of similar to 90 mW at lambda = 560 nm. The microchip converter was placed in a standard TO-18 (5.6 mm in diameter) laser diode package.