Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer

Journal article

Peer reviewed

Seif El Whibi, Lotfi Derbali, Pascal Tristant, Cédric Jaoul, Maggy Colas, Richard Mayet, Julie Cornette and Hatem Ezzaouia

Journal of materials science. Materials in electronics, Vol.30(3), pp.2351-2359

01/02/2019

Abstract

Chemical Sciences

Engineering Sciences

Material chemistry

Materials

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Title: Optimized nc-Si:H thin films with enhanced optoelectronic properties prepared by micro-waves PECVD used as an effective silicon surface passivation layer
Creators - without role: Seif El Whibi - University of Carthage
Lotfi Derbali - Research and Technology Center of Energy
Pascal Tristant - European Ceramics Centre
Cédric Jaoul - European Ceramics Centre
Maggy Colas - European Ceramics Centre
Richard Mayet - European Ceramics Centre
Julie Cornette - European Ceramics Centre
Hatem Ezzaouia - Research and Technology Center of Energy
Publication Details: Journal of materials science. Materials in electronics, Vol.30(3), pp.2351-2359
Publisher: Springer Verlag
Identifiers: 9929491508331
Academic Unit: Shaqra University
Language: English
Resource Type: Journal article