Abstract
The laser irradiation effect on the optoelectrical properties of Ge
10
Se
90
and Ge
10
Se
85
Cu
5
thin films in the view of Cu-doping effect has been investigated. The illumination effect leads to structural changes in compositions that result from electron–hole excitations, defect creation/modification, and subsequently atomic motions. The dispersion of the refractive index is discussed in terms of the single-oscillator model, non-linear optics, coordination number and lone-pair electrons. Adding Cu to the host glass decreased the band gap (photo-darkening effect). The optoelectrical properties of the studied films have been investigated in the view of the high-frequency dielectric constant
ϵ
∞
, volume and surface energy loss functions VELF and SELF, the dielectric loss factor
δ
, the plasma frequency
w
p
, and the damping frequency
w
d
. The above mentioned parameters are revealed to be effected upon Cu doping as well as laser irradiation. Our findings can be utilized in device applications for laser-activated switches and memories.