Abstract
The goal of the present investigation is to reduce the stress, strain, and defects of porous silicon through a passivation process. We have investigated different layers of porous silicon (PSL) which were intentionally doped with samarium (Sm) by the electrochemical deposition. The used precursors were samarium oxides (Sm
2
O
3
) 0.05 M mixed with sulfuric acid (H
2
SO
4
) 0.05 M. The influence of samarium on the distribution of oxygen was studied by Fourier transform infrared spectroscopy (FTIR). Indeed, the glancing incidence X-ray diffraction proves the degree of structural order in PS and the presence of these complex metals (Sm) on its surface. The dispersion of the Sm metals on the PS surface (Sm/PSLs) exhibited better performances for the treated wafers in regard to the untreated ones. That means, we obtained a noteworthy increase in the effective minority carrier lifetime
τ
eff
and an apparent enhancement in photoluminescence (PL) intensity. Particularly, the chief goal of the current study is to clarify that the large enhancement of the electronic quality of the wafers is related to the presence of Sm.