Abstract
The effects of overtaking collisions of electrostatic multisolitons (i.e., N-soliton) in an electron-hole dense semiconductor plasma are examined employing the reductive perturbation theory (RPT) and Hirota's bilinear method (HBM). A Korteweg-de Vries equation (KdVE), which admits N-soliton, is derived using the RPT. In addition, HBM is applied that resulted in two-soliton and three-soliton solutions. The exchange of energies due to the overtaking collisions between the electrostatic N-soliton are analyzed by varying physical parameters, such as the quantum semiconductor plasma number density and the exchange-correlation terms for electrons and holes, which causes alternation in the behavior of solitons. It is found that the existence of exchange-correlation potentials leads to a diminishing in a phase shift of N-soliton.The current study is an attempt to further exemplify the essential properties of N-soliton in electron-hole plasmas and their applications in the modern semiconductor electronic devices of nanoscale size.