Abstract
The aim of this paper is to study the effect of erbium oxide (Er2O3) on porous silicon (PS) wafers used for photovoltaic application. An immersion of PS wafers in Er2O3 solution can be used to enhance light trapping and form an efficient surface by passivation process. PS was prepared by the stain-etching method and doped by Er species. In fact, the topography was investigated by the scanning electron microscope (SEM). In addition, the spectral behaviors of the reflectivity and the photoluminescence were discussed. The dependence of minority carrier lifetime was evaluated by means of the Quasi-Steady-State Photoconductance technique (QSSPC). Besides, an enhancement in lifetime was observed. A framework is provided for estimating an efficiency improvement in studied films which will help to guide the development of improved energy-efficient.