Abstract
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136-563 K for GaTe compound grown in single crystal form by modified Bridgman technique. The crystals obtained had Positive-type conductivity with a hole concentration of 3.8 x 10(12) cm(-3) at room temperature. Conductivity and Hall mobility at room temperature were evaluated as 4.4 x 10(-3) ohm(-1) cm(-1) and 7079 cm(2)/V.s, respectively. The energy gap width of 1.5 eV was found. The effective mass of holes and electrons at room temperature were 4.16 m(o) and 0.1174 m(o), respectively