Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP

Journal article

Peer reviewed

Onur Esame, Yasar Gurbuz, Ibrahim Tekin and Ayhan Bozkurt

Microelectronics journal, Vol.35(11), pp.901-908

11/2004

Abstract

Amplifiers

Applied sciences

Circuit properties

Electric, optical and optoelectronic circuits

Electronic circuits

Electronics

Exact sciences and technology

Materials

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

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Title: Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP
Creators - without role: Onur Esame - Sabancı Üniversitesi
Yasar Gurbuz - Sabancı Üniversitesi
Ibrahim Tekin - Sabancı Üniversitesi
Ayhan Bozkurt - Sabancı Üniversitesi
Publication Details: Microelectronics journal, Vol.35(11), pp.901-908
Publisher: Elsevier Science
Identifiers: 9915177708331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article