Abstract
Simple cell assembly using Pt as counter electrode and Iodide/Triiodide as electrolyte was utilized to understand the effect of Ni-doping in CdS QDs. Drastic decreases of series resistance from 5.57 to 1.67 for un-doped CdS and 4% Ni-doped CdS.
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•Ni-doped CdS QDs is successfully deposited on TiO2/FTO by SILAR.•Size of the CdS was found to be ∼10 nm and TiO2 was found to be ∼20 nm.•Enhancement in the optical property was achieved by Ni doping.•Efficiency increased from 0.53% to 1.67% due to doping effect.•Series resistance was 5.57 for un-doped and 1.67 for 4% Ni-doped CdS.
CdS quantum dots (QDs) and Ni-doped CdS QDs sensitized photoanodes were deposited over TiO2/FTO substrate by successive ionic layer adsorption and reaction (SILAR) method. The photoanodes were studied systematically; the results confirmed the anchoring of CdS or Ni-doped CdS over the spin-coated TiO2/FTO substrate. Among various photoanode solar cell assembles, 4% Ni concentration was found to be optimum due to better optical and photovoltaic property. The 4% Ni-doped CdS QDs maximum adsorption range is 550 nm with enhanced absorbance. It leads to enhancement in the cell efficiency from 0.53% to 1.67%.