Abstract
We demonstrate a bottom up approach for the aligned epitaxial growth of Si quantum dots (QDs) on one-dimensional (1D) hafnium oxide
(
HfO
2
)
ridges created by the growth of
HfO
2
thin film on single wall carbon nanotubes. This growth process creates a high strain 1D ridge on the
HfO
2
film, which favors the formation of Si seeds over the surrounding flat
HfO
2
area. Periodic alignment of Si QDs on the 1D
HfO
2
ridge was observed, which can be controlled by varying different growth conditions, such as growth temperature, growth time, and disilane flow rate.