Abstract
Indeno [1,2-b] fluorene-6,12dione (Indeno-fluorene) films were deposited on glass substrates by thermal evaporation technique. x-ray diffraction of the Indeno-fluorene films shows amorphous phase nature. Alternating current, AC conductivity was studied as a function of frequency and temperature within a range of 40 Hz-8 MHz and 303-423 K, respectively. The calculated value of the electron density of states (N(EF)) near the Fermi states at room temperature and frequency of 500 kHz was 8.73 x 10(23) eV(-1)cm(-3). In addition, parts of dielectric constant-real and imaginary were investigated at different temperatures. The relaxation process, relaxation time, activation energy, Coulomb height potential, and the extensive localized electronic states were studied. The normalization spectra of electric modulus elucidate that Indeno-fluorene thin films can be expounded by a non-Debye type of relaxation. The obtained data were discussed in terms of correlated barrier hopping model (CBH) and candidate Indeno-fluorene films for solar cells, transistor units, and electronic applications.