Abstract
This article highlights the study of photo-thermoelastic interaction in an unbounded semiconductor medium containing a spherical cavity. This problem is solved using the new hyperbolic two-temperature model. The bounding surface of the cavity is traction free and loaded thermally by exponentially decaying pulse boundary heat flux. In addition, the carrier density is prescribed on the inner surface of the cavity in terms of the recombination speed. The techniques of Laplace transforms are used to get the analytical solutions of the problem in the transformed domain by the eigenvalues method. The inversions of Laplace transformations have been carried out numerically. The outcomes also display that the analytical schemes can overcome the mathematical problem to analyze this problem. Numerical outcomes for a semiconductor material are performed and demonstrated graphically. According to the numerical results, this new hyperbolic two-temperature model of thermoelasticity offers finite speed of the thermal wave and mechanical wave propagation.