Abstract
In this work, we extend the modification of the generalized theories of thermoelasticity and photothermal. In this context, a new model has been derived based on the Moore-Gibson-Thompson (MGT) equation and combining the two models of thermoelasticity with one relaxation time (Lord-Shulman) and the theory of Green-Naghdi of the third type (GN-III). One of the most important features of the proposed model is that it predicts limited speeds of thermal signals and photovoltaic waves. The proposed model has been applied to examine the interactions between plasma, thermal, and elastic processes within a solid semiconductor sphere. It was taken into account that the sphere rotates with a constant angular velocity around its axis, is surrounded by an external magnetic field, and is also subjected to thermal shock. The singularities encountered in different physical fields have been addressed in the center and poles of the sphere. The influence of rotation and carrier lifetime parameters on different physical properties of semiconductor materials has been graphically displayed and explained using the Laplace method.