Abstract
In this discussion, the focus is on studying the coupling between the strong external magnetic field, which falls on the excited semiconductor material. The microelements with microtemperature process inside the medium are taken into consideration. The photo-thermo-elasticity theory is used in the presence of rotation field and Hall current. The two-dimensional deformation for governing equations is taken to discuss the main model of the photo-thermo-elasticity theory in dimensionless formation. The elastic-plasma-thermal transport in the context of the magnetic field has been constructed. The mathematical technique by the Fourier and Laplace transformations is used to remove one space-time variable in the physical domain. The impact of microtemperature vector inside the medium is considered. To obtain the main physical quantities in the time domain, the ramp-type heating is used at the free surface with other mechanical-elastic-plasma conditions when the inversion of Fourier and Laplace integrals was used with some numerical technique. Many comparisons under the effect of Hall current are made. Some physical quantities are graphed and discussed.