Abstract
The photo-thermo-elastic analysis problem of a half space without energy dissipation are obtained in the context of Green-Naghdi's (GNII) theory. Closed-form analytical solutions to obtain the physical quantities subjected to a heat flux using the pulse that decays exponentially in the surface of semiconductor half-space are presented. Through the use of Laplace and Fourier transforms with the methodology of eigenvalues techniques, the analytical solutions of all variables are presented. The derived method is evaluated with numerical results which are applied to the semiconductor medium in simplified geometry. Suitable discussions and conclusions are presented.