Abstract
A photodiode based on titanium dioxide:zinc oxide (TiO2:ZnO) was fabricated to be used in optoelectronics applications. The TiO2:ZnO composite film was prepared by the sol-gel method. The structural properties of the composite film were analyzed by scanning electron microscopy and X-ray diffraction techniques. It is seen that the film is formed from the nanoparticles. The photoresponsivity properties of the TiO2:ZnO composite film/p-type silicon diode were analyzed by phototransient current and photocapacitance techniques. The diode exhibited an optoelectronic device with obtained photovoltaic and photocapacitance behaviors. It is evaluated that the TiO2:ZnO composite film/p-type silicon diode can be used as a optoelectronic device in optic communications and photoelectric applications.