Abstract
Cu2+ ion-doped ZnO nanoparticles were elaborated using a low cost-effective polyol method. The structural and morphological analysis of the samples was investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). The dielectric and electrical properties have highlighted the dependence of frequency and temperatures on dielectric parameters using impedance spectroscopy. The results obtained showed that Cu-doped ZnO Nps have a high dielectric constant and low dielectric loss as compared to pure ZnO. Compared with pure ZnO, the photoluminescence in Cu-doped ZnO Nps shows that UV emission peak shifts to lower energy and its intensity increases which is ascribed to the increases of defect density in the band gap. In addition, this enhancement in luminescence proves the large surface-to-volume produced after doping, which verified the high responsivity of our work. These important dielectric and optoelectronics properties for Cu-doped ZnO Nps make them interesting material for use in UV photodetector.