Sign in
Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN
Journal article   Peer reviewed

Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN

Katsushi Fujii and Kazuhiro Ohkawa
Japanese Journal of Applied Physics, Vol.44(7L), pp.L909-911
01/01/2005

Abstract

We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott–Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

Metrics

1 Record Views

Details