Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Journal article

Peer reviewed

Katsushi Fujii, Masato Ono, Yasuhiro Iwaki, Keiichi Sato, Kazuhiro Ohkawa and Takafumi Yao

Journal of physical chemistry. C, Vol.114(51), pp.22727-22735

30/12/2010

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Title: Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN
Creators - without role: Katsushi Fujii - Tokyo University of Science
Masato Ono - Tokyo University of Science
Yasuhiro Iwaki - Tokyo University of Science
Keiichi Sato - Tokyo University of Science
Kazuhiro Ohkawa - Tokyo University of Science
Takafumi Yao - Tohoku University
Publication Details: Journal of physical chemistry. C, Vol.114(51), pp.22727-22735
Identifiers: 9945313008331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article