Abstract
TThe formation of transition metal silicides and carbide/graphite have significantly imporved the device Schottky and ohmic contacts. The surfaces of transition metal (Ti,Ni) films deposited on SiC and Si(100) substrates were imaged by photoemission electron microscopy (PEEM) utilizing either high-pressure Hg lamp or synchrotron radiation (SR) as light sources for photoemission. The images were taken after in-situ thermal treatment on the samples in UHV conditions. Formation of structures as well agglomerations were observed on Ti(40 nm)/Si(100) samples annealed at approx =700 deg C. The surface of Ti(50 nm)/4H-SiC sample was stable up to approx =850 deg C, where formations of structures were observed. For the Ti(10 nm)/3C-SiC/Si sample annealed to approx =800 deg C, island structures (in-ring clusters) were formed. Although the surface of Ni (4 nm) film on 3C-SiC remains stable up to 650 deg C, diffusions of Ni films on the edge of the films were observed. Interestingly, an abrupt contrast reversal was observed at approx =240 deg C for Ni/3C-SiC sample.