Abstract
GaAsBi/GaAs nanostructure is successfully grown by metalorganic vapor phase epitaxy. The GaAsBi layer grown on a rough GaAs buffer surface is investigated in order to succeed the formation of quantum dots (QDs) structures. Photoluminescence (PL) measurements show signals from all QDs up to the room-temperature. The PL peak positions are nearly unchanged by varying measurement temperature, but relative intensity of some peaks has changed. In addition, the positions of these low temperature PL peaks slightly shift after annealing, although the QDs luminescence intensity has strongly affected. These results are considered to be related to the reduced size of the QDs and/or by Bi content changes in the QDs. (C) 2015 Elsevier B.V. All rights reserved.