Abstract
A detailed characterization of the impurity centers involved in the photoluminescence (PL) of doped and undoped CdTe has been performed. Special attention has been devoted to the temperature dependence of the band between 1.54 and 1.55 eV observed in As and Sb doped samples. The longitudinal optical (LO) phonon replicas are characterized by a Huang-Rhys factor S. The various electron-hole recombination processes are explained by means of a simple analytic model correlating the position of the zero-phonon lines to the relative intensities of the phonon side-bands. The model accounts for the chemical shift of the defect centers and describes the effect of the charge carrier LO-phonon interaction in the framework of the adiabatic approximation within the envelope function approach.