Abstract
•Layers were deposited by flash evaporation from CuIn0.5Ga0.5Te2 powder.•The chalcopyrite structure of CuIn0.5Ga0.5Te2 material is confirmed by X-ray.•Optical measurements yielded a band gap of 1.27 eV.•PL study revealed that the radiative emissions arise from (FB) and (DAP) recombination.
Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz. The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600–2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.