Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping

Journal article

Peer reviewed

T Mitsuyu, K Ohkawa and O Yamazaki

Applied physics letters, Vol.49(20), pp.1348-1350

17/11/1986

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Photoluminescence

Physics

1 Record Views

Title: Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with low-energy ion doping
Creators - without role: T Mitsuyu - Panasonic
K Ohkawa - Panasonic
O Yamazaki - Panasonic
Publication Details: Applied physics letters, Vol.49(20), pp.1348-1350
Publisher: American Institute of Physics
Identifiers: 9945626908331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article