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Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide
Journal article   Peer reviewed

Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Hiroshi Takehira, Md Saidul Islam, Mohammad Razaul Karim, Yuta Shudo, Ryo Ohtani, Leonard F. Lindoy, Takaaki Taniguchi, Minoru Osada and Shinya Hayami
ChemistrySelect (Weinheim), Vol.2(24), pp.6941-6944
22/08/2017
DOI: https://doi.org/10.1002/slct.201701509

Abstract

Chemistry Chemistry, Multidisciplinary Physical Sciences Science & Technology
Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

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