Abstract
In this work, the photothermal interaction generated by surface absorption of laser radiation in a semiconducting medium is studied in the context of strain and temperature rate-dependent theory. The medium surface is exposed to a uniform laser beam and is considered to be stresses free. The integral transform method is used to obtain the general solution of the considered problem, where the inverse of the chosen transformation is computationally obtained. The Silicon material is selected to analyze the consistency of the results of the novel model.