Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors

Journal article

Mariana Berruet, José Carlos Pérez-Martínez, Beatriz Romero, Cedric Gonzales, Abdullah M. Al-Mayouf, Antonio Guerrero and Juan Bisquert

ACS energy letters, Vol.7(3), pp.1214-1222

11/03/2022

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Title: Physical Model for the Current–Voltage Hysteresis and Impedance of Halide Perovskite Memristors
Creators - without role: Mariana Berruet - Universitat Jaume I
José Carlos Pérez-Martínez - Universitat Jaume I
Beatriz Romero - Universidad Rey Juan Carlos
Cedric Gonzales - Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
Abdullah M. Al-Mayouf - King Saud University
Antonio Guerrero - Universitat Jaume I
Juan Bisquert - Universitat Jaume I
Publication Details: ACS energy letters, Vol.7(3), pp.1214-1222
Identifiers: 9948481808331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article