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Physical properties of half-Heusler YMnZ (Z = Si, Ge, Sn) compounds via ab-initio study
Journal article   Peer reviewed

Physical properties of half-Heusler YMnZ (Z = Si, Ge, Sn) compounds via ab-initio study

M. Atif Sattar, Muhammad Rashid, Fayyaz Hussain, Muhammad Imran, M. Raza Hashmi, A. Laref and S.A. Ahmad
Solid state communications, Vol.278, pp.10-19
09/2018

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