Abstract
The increasing threat of security attacks on hardware security applications has driven research towards exploring beyond CMOS devices as an alternative. Spintronic devices offer advantages like low power, non-volatility, inherent spatial and temporal randomness, simplicity of integration with a silicon substrate, etc., making them a potential candidate for next-generation hardware security systems. In this work, we explore the Giant Spin Hall effect (GSHE) driven spin-orbit torque magnetic tunnel junction (MTJ) implementing physically unclonable function (PUFs). The effect of process variation is considered in key MTJ parameters like TMR ratio, free and oxide layer thickness following Gaussian distribution, and Monte-Carlo simulations to determine the effect of the process variations. A unique challenge-response (C-R) pair is obtained utilizing the inherent variations in magnetization dynamics of the free layer due to process variations.