Abstract
Acid fuchsin is a new organic semiconductor. The results of XRD measurements confirmed that acid fuchsin is polycrystalline in nature with a triclinic crystal structure with the P1 space group. The absorption index and the optical band gap transition of AF powder were calculated from the optical diffused reflectance (ODR). The direct, as well as the indirect band gaps, were calculated. These values of the energy band gaps for acid fuchsin enhance the light absorption and make it a suitable material to be applied in photovoltaic devices. The DC electrical conductivity of acid fuchsin was investigated in the temperature range 289-373 K. The AC electrical conductivity was discussed in terms of charge carrier hopping motions mechanism. Both the epsilon(1) and epsilon(2) which represent dielectric constant and dielectric loss, respectively, have been studied. Acid fuchsin can be used in organic devices as a new organic semiconductor.