Abstract
In perovskite solar cells (PSCs), the most commonly used hole transport material (HTM) is spiro‐OMeTAD, which is typically doped by metalorganic complexes, for example, based on Co, to improve charge transport properties and thereby enhance the photovoltaic performance of the device. In this study, we report a new hemicage‐structured iron complex, 1,3,5‐tris(5′‐methyl‐2,2′‐bipyridin‐5‐yl)ethylbenzene Fe(III)‐tris(bis(trifluoromethylsulfonyl)imide), as a p‐type dopant for spiro‐OMeTAD. The formal redox potential of this compound was measured as 1.29 V vs. the standard hydrogen electrode, which is slightly (20 mV) more positive than that of the commercial cobalt dopant FK209. Photoelectron spectroscopy measurements confirm that the iron complex acts as an efficient p‐dopant, as evidenced in an increase of the spiro‐OMeTAD work function. When fabricating planar PSCs with the HTM spiro‐OMeTAD doped by 5 mol % of the iron complex, a power conversion efficiency of 19.5 % (AM 1.5G, 100 mW cm−2) is achieved, compared to 19.3 % for reference devices with FK209. Open circuit voltages exceeding 1.2 V at 1 sun and reaching 1.27 V at 3 suns indicate that recombination at the perovskite/HTM interface is low when employing this iron complex. This work contributes to recent endeavors to reduce recombination losses in perovskite solar cells.
A supramolecular iron complex is synthesized as dopant for the hole transport material spiro‐MeOTAD. Employing this material in planar perovskite solar cells, the authors achieve a remarkable open‐circuit voltage larger than 1.2 V at 1 sun and 1.27 V at 3 suns. This work contributes to engineering and minimizing the charge‐carrier recombination at the interface between perovskite and hole transport layer.