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Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates
Journal article   Peer reviewed

Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

H Wenisch, K Ohkawa, A Isemann, M Fehrer and D Hommel
Electronics letters, Vol.34(9), pp.891-893
30/04/1998
DOI: https://doi.org/10.1049/el:19980669

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
Stable room temperature operation of planar green laser diodes at 512nm was achieved on ZnSe substrates, which are conductive in the first 200 mu m from the top due to post-growth aluminium doping. The threshold current density is 900-1000A/cm(2) and the operating voltage is similar to 14V. The lifetime in pulsed operation exceeds 1 h.

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