Plasma-induced damage in high-k/metal gate stack dry etch

Journal article

Peer reviewed

MUHAMMAD MUSTAFA Hussain, Seung-Chul Song, Joel Barnett, CHANG YONG Kang, Gabe Gebara, Barry Sassman and Naim Moumen

IEEE electron device letters, Vol.27(12), pp.972-974

01/12/2006

Abstract

Applied sciences

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Integrated circuits

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Plasma-induced damage in high-k/metal gate stack dry etch
Creators - without role: MUHAMMAD MUSTAFA Hussain - Sematech
Seung-Chul Song - Sematech
Joel Barnett - Sematech
CHANG YONG Kang - Sematech
Gabe Gebara - Advanced Technology Development Facility, Austin, TX 78741, United States
Barry Sassman - Sematech
Naim Moumen - IBM
Publication Details: IEEE electron device letters, Vol.27(12), pp.972-974
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9945309008331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article