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Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process
Journal article   Peer reviewed

Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

S L Ng, H S Lim, Y L Lam, Y C Chan, B S Ooi, Aimez, J Beauvais and J Beerens
Electronics letters, Vol.38(5), pp.241-242
28/02/2002
DOI: https://doi.org/10.1049/el:20020151

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
A quantum well intermixing process for the fabrication of polarisation insensitive electro-absorption intensity modulators on an InGaAs/InGaAsP heterostructure is reported. This technique is based on low-energy arsenic and phosphorus ion implantation.

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