Abstract
Polarized infrared (IR) reflectance studies of In0.10Ga0.90N epilayer on sapphire substrate (Al2O3) grown by molecular beam expitaxy are presented. The features of the polarized IR reflectance spectra and the optical characteristics of In0.1Ga0.90N were investigated. Based on the anisotropic dielectric function model, the experimental IR reflectance spectra were numerically fitted by the theoretical IR reflectance spectra. Room temperature polarized IR reflectance measurements were performed at an incident angle of 15(o) by using a Fourier transform infrared spectroscopy. Good agreement between the measured and calculated spectra has been obtained. From the fit of the experimental curve, the optical parameters at the center of Brillouin zone are determined for the In0.1Ga0.90N epilayer.