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Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics
Journal article   Open access  Peer reviewed

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics

Mario Lanza, Vanessa Iglesias, Marc Porti, Montse Nafria and Xavier Aymerich
Nanoscale research letters, Vol.6(1), pp.108-108
31/01/2011
DOI: https://doi.org/10.1186/1556-276X-6-108
PMCID: PMC3211152
PMID: 21711617

Abstract

Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics Technology
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. The impact of an electrical stress on the electrical conduction and the charge trapping of amorphous and polycrystalline Al2O3 layers have been also analyzed.
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https://doi.org/10.1186/1556-276X-6-108View
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